In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 62, No. 9 ( 2013), p. 097202-
Abstract:
We have studied the effect of population inversion associated with the electron and hole injection in graphene layer n-i-p structures with split gates at room temperature. Considering the transverse electric field screening of the n-section, we calculated the dependence of the electron-hole effective temperature and optical phonon effective temperature on the gate-voltage. It is shown that the injection can lead to cooling of the electron-hole plasma in n-section to the temperatures lower than the lattice temperature. The current-voltage characteristics, and the frequency-dependent dynamic conductivity are calculated, the frequency-dependent dynamic conductivity can be negative in the terahertz frequency range at a certain applied voltage. The study demonstrates that electron-hole plasma cooling can enhance the negative dynamic conductivity effect and improve the feasibility of terahertz lasing.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
DOI:
10.7498/aps.62.097202
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2013
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