In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 57, No. 7 ( 2008), p. 4328-
Abstract:
Zn1-xCoxO (x=0.01, 0.02) dilute magnetic semiconductor thin films deposited on Si (001) substrates at 650℃ by pulsed laser deposition method were studied by X-ray absorption fine structure, X-ray diffraction and magnetic measurement. The typical ferromagnetic hysteresis curves were obtained by superconducting quantum interference device magnetometry at room temperature. The X-ray diffraction results showed that Zn1-xCoxO films were of the wurtzite structure. The X-ray absorption fine structure results revealed that the Co atoms were incorporated into the ZnO lattice and located at the substitutional Zn sites, and a homogeneous phase of Zn1-xCoxO was formed. Comparing the experimental curves with the theoretical calculation results, the additional peak C was assigned to the oxygen vacancies, which indicated that the ferromagnetism of Zn1-xCoxO films was strongly correlated with the existence of oxygen vacancies.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
2008
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