In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4R ( 1994-04-01), p. 1977-
Abstract:
An evaluation of silicon epitaxial thin film growth using the SiHCl 3 -H 2 system in a horizontal chemical vapor deposition (CVD) reactor is discussed. The transport equations for gas velocity, temperature and concentration of chemical species are solved, taking account of the dependence of gas properties on temperature and composition. By comparing the measured and predicted growth rates under atmospheric pressure, the increase in growth rate with temperature and SiHCl 3 concentration can be explained by assuming an Arrhenius-type expression for the chemical reaction of SiHCl 3 and H 2 on a substrate. The calculated growth rate of the Si film increases nonlinearly with SiHCl 3 concentration because the flow, temperature, and concentration distributions in the reactor depend on the SiHCl 3 concentration. Suppression of the growth rate due to thermal diffusion, which transports SiHCl 3 gas away from the hot surface, is found to become significant as the SiHCl 3 concentration in the reactor increases.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.1977
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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