In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 8B ( 1992-08-01), p. L1150-
Abstract:
Al 0.1 Ga 0.9 As/Si and thin GaAs/Si monolithic two-terminal tandem cells, which are fabricated by thermal diffusion and metalorganic chemical vapor deposition (MOCVD), have exhibited the active area efficiencies of 16.3% and 15.6%, and the total area efficiencies of 13.8% and 13.1%, respectively. The key technologies required to fabricate the successful tandem cell are the formation of the p + -n junction in the Si substrate and the matching of the photocurrents between the top and the bottom cells.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.L1150
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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