In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 30, No. 8R ( 1991-08-01), p. 1798-
Abstract:
a-Si:H/ZnS multilayer films were prepared by glow discharge decomposition of a silane gas and a diethylsulfur-diethylzinc gas mixture, and the effect of hydrogen dilution in the preparation was investigated. It was revealed, through ESR and electrical measurements, that the hydrogen dilution of the silane gas down to 3% during deposition suppresses the formation of interface defects, resulting in the enhancement of both the photoconductivity and the photoluminescence. However, it was also revealed through IR measurements that a-Si:H and ZnS tend to result in an alloying around the interface.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.30.1798
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1991
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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