In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 2R ( 1993-02-01), p. 783-
Abstract:
We have observed the fundamental operation of a superconducting base transistor using a Ba 1- x K x BiO 3 (BKBO) oxide superconductor. The transistor had a structure consisting of planar-type Au/natural-barrier/BKBO/niobium-doped SrTiO 3 (STO:Nb), where Au, BKBO and STO:Nb correspond to the emitter, base and collector in the transistor, respectively. The Au/natural-barrier/BKBO emitter-base junction showed good tunneling characteristics, reflecting the superconductivity of BKBO. The BKBO/STO:Nb base-collector junction showed asymmetric I-V characteristics. Electrical measurements during transistor operation revealed collector current increment as the emitter current increased at 4.5 K. Furthermore, a transistor with a 100-nm thick base layer showed a maximum common-base current gain of over 0.5 at 4.5 K.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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