In:
Applied Physics Letters, AIP Publishing, Vol. 70, No. 16 ( 1997-04-21), p. 2123-2125
Abstract:
We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN–AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented. We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230±0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1997
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Bookmarklink