In:
Journal of Applied Physics, AIP Publishing, Vol. 100, No. 8 ( 2006-10-15)
Abstract:
Real-time grazing-incidence small-angle x-ray scattering has been employed to study the adsorption and desorption of Ga on c-plane sapphire and Ga-polar GaN surfaces. Formation of self-organized liquid Ga nanodroplets has been observed on sapphire during Ga exposure from an effusion cell at high flux. Subsequent to the Ga deposition, the nanodroplets were nitridated in situ by a nitrogen plasma source, which converted the droplets into GaN nanodots. In addition to the droplet studies, at lower Ga flux, the adsorption and desorption of Ga have been studied in the predroplet regime. For identical processing conditions, significantly different Ga adsorption∕desorption rates were observed on sapphire and GaN surfaces.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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