In:
Journal of Applied Physics, AIP Publishing, Vol. 94, No. 4 ( 2003-08-15), p. 2498-2506
Abstract:
Field effect transistors based on a GaN/AlGaN system have shown remarkable performance characteristics in a wide range of device applications. However, due to the large effective mass of GaN, the mobility in the channel is small. In this work, we consider a GaN/AlGaN structure with a thin InN channel of the order of a few monolayers. We find that mobility in the channel can improve considerably while breakdown characteristics are not expected to suffer. Mobilities of ≃2500 cm2 (V s)−1 are predicted along with high sheet charges for low interface disorder. Good agreement with experimental results is observed for higher degrees of disorder within the model. At higher electric fields, we find that most electron population transfers to higher valleys or other subbands that lie in AlGaN or GaN. We also compare the low-field mobility-charge product for this structure with the conventional AlGaN/GaN structure and find that the two values are similar.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2003
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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