In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 8S2 ( 2016-08-01), p. 08PD03-
Abstract:
We propose a method to predict the length dependency of the magnitude of degradation caused by negative bias temperature instability (NBTI) stress applied to a p-MOSFET. Threshold voltage degradation Δ V th varied according to the drain bias V d , during the measurement of drain current I d . The depletion length L dep into the channel was calculated based on a particular V d value and the channel doping concentration. L dep was used to extract the channel edge region length L edge , then the center channel region length L cen was obtained by subtracting L edge from the gate length L gate . We proposed an equation that uses L dep , L cen , L edge and degree of Δ V th variation to calculate Δ V th according to L gate while the p-MOSFET is under NBTI stress. Equation estimates of Δ V th at different L gate were similar to measurements.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.08PD03
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Bookmarklink
