In:
Applied Physics Letters, AIP Publishing, Vol. 53, No. 25 ( 1988-12-19), p. 2525-2527
Abstract:
Highly doped InP:Yb layers have been grown by adduct metalorganic vapor phase epitaxy at atmospheric pressure. Yb(MeCp)3, where Me=CH3 and Cp=n5-C5H5, was synthesized as Yb source material because of its relatively high vapor pressure at acceptable source temperatures. The layers were grown in a wide range of growth temperatures (560–670 °C) and Yb mole fractions (10−9–10−7). In photoluminescence experiments they showed strong Yb3+-4f emission. The layers were further characterized by Hall measurements and secondary-ion mass spectroscopy. In order to obtain n-type InP:Yb samples with high carrier concentrations we have grown InP layers double doped with S and Yb.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1988
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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