In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 255 ( 2016-9), p. 331-337
Abstract:
Surface sensitive methods, UV-VIS spectral ellipsometry (SE), surface photovoltage (SPV) measurements, and X-ray photoelectron spectroscopy (XPS) measurements were combined to investigate in detail the Si substrate oxidation and resulting interface electronic properties. Various wet-chemical oxidation methods utilizing hot deionized water with different HCl or Ozone content were optimized in order to prepare ultra-thin oxide layers with reproducible oxide thicknesses ( 〈 d ox 〉 0.3 to 3.5 nm), low values of interface state densities and well-defined interface charges. The simulation tool ELifAnT (Effective Lifetime Analysis Tool) was utilised to analyse experimental excess minority charge carrier density (Δn) dependent charge carrier lifetimes τ eff (Δn), and to establish correlations between preparation induced interface charges Q it and defect densities D it on both p-and n-type substrates.
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.255
DOI:
10.4028/www.scientific.net/SSP.255.331
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2016
detail.hit.zdb_id:
2051138-3
Bookmarklink