In:
Journal of Applied Physics, AIP Publishing, Vol. 69, No. 6 ( 1991-03-15), p. 3601-3604
Abstract:
At low temperature, the dominant current transport process of a p-type PtSi Schottky diode on a moderately doped Si substrate is thermionic emission over the barrier. In this paper, current has been measured as a function of temperature at a fixed reverse bias for several Schottky diodes. It is found that diffusion effects due to the limitation upon the diffusion rate through the space-charge region can become significant under some conditions. At moderate field, these conditions are calculated to be at a temperature of 150 K or greater, depending on the doping density of the devices. I-V-T measurements were carried out on several Schottky devices fabricated in slightly different ways, and the diffusion effect was observable in some of these devices. A numerical routine is utilized to fit the experimental data to a combined thermionic emission-diffusion theory in these regions. It is found that the experimental results fit this theory well. In addition, the acceptor density at which diffusion becomes the dominant current at 80 K under moderate field is calculated to be around 5×1011 cm−3.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1991
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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