In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 3A ( 1999-03-01), p. L217-
Abstract:
Free-standing GaN, nearly equal in area to the original
2 inch wafer, was produced from 250–300 µm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The thick
films were separated from the growth substrate by laser-induced liftoff, using a pulsed laser to thermally decompose a thin layer
of GaN at the film-substrate interface. Sequentially scanned pulses were employed and the liftoff was performed at elevated
temperature ( 〉 600°C) to relieve postgrowth bowing. After
liftoff, the bow is only slight or absent in the resulting free GaN.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L217
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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