In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 4S ( 2014-04-01), p. 04EE07-
Abstract:
A highly UV-light sensitive and sensitivity robust CMOS image sensor with a wide dynamic range (DR) was developed and evaluated. The developed CMOS image sensor includes a lateral overflow integration capacitor in each pixel in order to achieve a high sensitivity and a wide DR simultaneously. As in-pixel photodiodes (PDs), buried pinned PDs were formed on flattened Si surface. The PD has a thin surface p + layer with a steep dopant concentration profile to form an electric field that drifts photoelectrons to the pinned n layer. This structure improves UV-light sensitivity and its stability. In addition, a buried channel source follower driver was introduced to achieve a low pixel noise. This CMOS image sensor was fabricated by a 0.18-µm 1-polycrystalline silicon 3-metal CMOS process technology with buried pinned PD. The fabricated image sensor has a high sensitivity for 200–1100 nm light wave band, high robustness of sensitivity and dark current toward UV-light exposure and a wide DR of 97 dB. In this paper, the PD structures, the circuit, the operation sequence and the measurement results of this CMOS image sensor are discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.04EE07
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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