In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7660-
Abstract:
We have developed a novel deep trench and local oxidation of silicon (LOCOS) isolation technology termed SITOS II in order to isolate the shallow-well regions necessary for realizing a high speed dynamic threshold metal oxide semiconductor field effect transistor (MOSFET) in a bulk wafer. Using this simple isolation technology, suppression of birds-beak formation, low junction leakage current, high punch-through voltage between shallow-wells, and sub-threshold transistor characteristics without kinks were achieved.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.7660
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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