In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 7A ( 1998-07-01), p. L827-
Abstract:
To realize a fine periodical pattern by electron beam lithography, a stady for using calixarene as a resist was carried out. A 25-nm-pitch resist pattern was fabricated and transferred to a thin InP layer by two-step wet chemical etching. Precise slight O 2 ashing, to eliminate residual matter was essential to transfer the pattern by wet etching. The controllability of the width was improved when using calixarene, when the period was 40 nm. Furthermore, a 25-nm-pitch InP pattern was buried in a GaInAs structure by organometallic vapor phase epitaxy. This technology could be applied to realize electron wave devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L827
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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