In:
CrystEngComm, Royal Society of Chemistry (RSC), Vol. 25, No. 1 ( 2023), p. 95-107
Abstract:
High-performance dielectric materials are essential components of electronic devices. In this work, RE-doped SrTiO 3 (RE = La, Nd, Yb) single crystals with excellent dielectric properties were prepared by the Verneuil method. For La-STO and Nd-STO, the RE ions are substituted for Sr 2+ only, and the excellent dielectric properties are mainly caused by defect dipoles associated with oxygen vacancies including and defect dipole clusters. For Yb-STO, Yb 3+ partially replaces Ti 4+ , forming an additional defect dipole , resulting in the best dielectric properties ( ε ′ = 3.6 × 10 4 , tan δ = 0.0036 under 1 kHz). In addition, N 2 atmosphere treatment promotes the production of oxygen vacancies and Ti 3+ and the formation of more defect dipoles, thus further optimizing the dielectric properties of Yb-STO ( ε ′ = 4.9 × 10 4 , tan δ = 0.004 under 1 kHz). This work suggests that the dielectric properties of RE-doped SrTiO 3 materials are closely related to oxygen vacancies, and the simultaneous substitution of Sr 2+ and Ti 4+ should enable obtaining dielectric properties superior to those of the substitution of Sr 2+ only. The present work provides a clearer understanding of the origin of SrTiO 3 dielectric properties, which is of great significance to the development of SrTiO 3 -based dielectric materials.
Type of Medium:
Online Resource
ISSN:
1466-8033
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
2025075-7
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