In:
Journal of Applied Physics, AIP Publishing, Vol. 99, No. 8 ( 2006-04-15)
Abstract:
We report on the capture barrier for the gallium related DX center in Cd0.99Mn0.01Te. In order to determine the barrier height, two methods were applied: an analysis of the persistent photoconductivity decay and the optical deep level transient spectroscopy technique. Over a range of temperatures varying from 77to105K, the capture barrier height, deduced from the decay time constants of photoconductivity, has been found to be equal to 0.22eV. An apparent hole trap, observed with the optical deep level transient spectroscopy, was attributed to the thermally activated capture cross section of a DX center with a 0.23eV capture barrier. The obtained data are close to 0.21eV, the value of the capture barrier which we determined earlier with the help of the deep level transient spectroscopy method.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2006
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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