In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 9S ( 1992-09-01), p. 2992-
Abstract:
Recently, metal β-diketonato complexes have been used as a gas source for preparing ferroelectric thin films by metalorganic chemical vapor deposition (MOCVD). Since we have synthesized highly purified metal dipivaloylmethanato (DPM) complexes such as Pb(DPM) 2 , Sr(DPM) 2 and Ba(DPM) 2 for ferroelectric thin films, we have investigated several properties of these chelate compounds related to depositing thin films. Their volatility and toxicity have also been investigated. As a result, it has been found that these chelate compounds have low vapor pressure, but present the advantages of easy handling because of the low toxicity and the possibility of forming thin films at lower temperature.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.2992
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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