In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 9S ( 1998-09-01), p. 5137-
Abstract:
In order to clarify the origin of the polarization fatigue phenomena,
charge traps in ferroelectric Pb(Zr,Ti)O 3 (PZT) thin films
were measured using the thermally stimulated current (TSC) technique. For polarization fatigued Pt/PZT/Pt/SiO 2 /Si(100) capacitors,
a peak of TSC was observed, and the trap density estimated from the TSC data
increased as switching cycles increased. Activation energy and density of the charge traps
were estimated to be 0.7–0.8 eV and on the order of 10 18 cm -3 ,
respectively. It was also observed that
degradation of remanent polarization of PZT was improved by the TSC measurement process.
On the other hand, no TSC peak was observed for fatigue free Ir/PZT/Ir/IrO 2 /SiO 2 /Si(100) capacitors.
From these results, it was suggested that the main origin of the polarization fatigue phenomena
was the domain pinning caused by trapped charge carriers injected by polarization reversal.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.5137
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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