In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 1S ( 1994-01-01), p. 873-
Abstract:
The progress in Si ULSI, and the parallel progress in GaAs LSI, has pushed the gate length in current devices toward 0.1 µm. Research laboratories have gone even further, and FETs with gate lengths as short as 20 nm have heen demonstrated. It is apparent that within the next decade or so, devices with gate lengths approaching this scale will be made in the production environment. These devices are likely to be susceptible to new physical effects that are now being studied in nanostructures, or mesoscopic devices as they are usually called. The first new effect, already seen in the short-gate length devices, is tunneling through the gate depletion region. In this paper, we try to summarize the major physical effects, some approaches to studying them, and the role they may play in future industrial devices.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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