In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 9R ( 1996-09-01), p. 4760-
Abstract:
The surfaces of Cu-rich and stoichiometric (slightly [In, Ga]-rich) Cu(In, Ga)Se 2 (CIGS) thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). At the surface of the Cu-rich and stoichiometric CIGS films, Cu 2- x Se and Cu(In, Ga) 3 Se 5 exist, respectively. The films were treated using KCN and NH 3 aqueous solutions. In the Cu-rich film, the treatment in the KCN solution completely eliminated the Cu 2- x Se impurity and the treatment in the NH 3 solution removed Cu 2- x Se only at the front surface. In the stoichiometric CIGS film, the NH 3 treatment removed Cu(In, Ga) 3 Se 5 from the surface. The recombination of the carriers occurs more in the heterojunction of the CdS/NH 3 -treated CIGS system than in that of the CdS/as-deposited CIGS system.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.4760
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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