In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 3S ( 1999-03-01), p. 1820-
Abstract:
We investigated the oxidation state of Fe in stoichiometric LiNbO 3 (SLN) in comparison with congruent LiNbO 3 (CLN) from the viewpoint of digital holographic data storage. The dual oxidation states (Fe 2+ and Fe 3+ ) were controlled by changing Fe-doping levels and thermal annealing conditions after growth. We found that the photorefractive (PR) sensitivity of SLN under extraordinary polarization is more than 50% higher than that of CLN, which is more than 10 times higher than that of CLN under the generally used ordinary polarization. This high performance in PR sensitivity can be explained by the increased Pockels constant and photoconductivity. We could demonstrate high performance digital recording with fast writing speed and low bit-error rate using stoichiometric LiNbO 3 under extraordinary polarization. We also observed that SLN showed a smaller erasure time constant than that of CLN because of increased photoconductivity. Consequently, the “M/# value” was almost the same as that of CLN. The M/# value is the metric for multiplexing and is proportional to the product of PR sensitivity and erasure time constant.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.1820
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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