In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12S ( 1996-12-01), p. 6534-
Abstract:
The effects of gas species on the charge build-up in reactive ion etching (RIE) have been investigated. The charge build-up was evaluated using metal/nitride/oxide/silicon (MNOS) capacitors and metal/oxide/silicon (MOS) capacitors. It was found that etching with electronegative gases such as O 2 and CF 4 results in considerable charge build-up. The spatial distribution of plasma parameters was diagnosed using a Langmuir probe. It was found that the spatial distribution of plasma parameters is non-uniform in plasmas of negative gases,while it is uniform in H 2 , He, Ar, and Xe gas plasmas. The results suggest that we must take the effect of the gas species into consideration for the nonuniformity in a plasma, which causes the significant charge build-up. Models that can be used to explain the effect of gas species are discussed. It was also found that the charge build-up can be drastically reduced by adding H 2 gas to negative gases.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.6534
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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