In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10R ( 1993-10-01), p. 4694-
Abstract:
Aluminum film with overlayered titanium nitride (TiN), which was formed as antireflective material, has been investigated. The effect of TiN film on aluminum film properties and the layered-metal line reliability as an interconnect depend on its deposition process. Aluminum grain enlargement after annealing was largely promoted by compressive stress of TiN, when TiN was deposited on aluminum after the aluminum was exposed to air. When TiN is deposited successively on aluminum in the same vacuum, aluminum grain size does not increase with TiN compressive stress. In this case, TiN has been found to have epitaxial continuity with the underlayer aluminum. This crystal continuity suppresses Al atom movement. Electromigration resistance of the TiN/Al/TiN layered line was found to have a longer lifetime when the overlayered TiN was deposited successively on aluminum. It is considered that this crystal continuity also influences the electromigration resistance of the layered-metal lines.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4694
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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