In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 8A ( 1996-08-01), p. L971-
Abstract:
The optimization of a LArge Tilt Implanted Sloped shallow Trench Isolation (LATI-STI) process for Non Volatile Memories is presented. The process uses 70° sloped and large tilt angle (up to 55°) implanted trench sidewalls, combined with a single step Chemical-Mechanical Polishing (CMP) planarization. A new method, so-called differential body effect method, enables very accurate and statistical electrical analysis of the subthreshold humped transistors characteristics under strong body bias ( V B ) values: compared to a 90° sloped trenches case larger process margins are obtained with the LATI-STI scheme. 15 V holding isolation is demonstrated for 0.45 µ m finished spacings between diffusions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L971
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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