In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12B ( 1996-12-01), p. L1625-
Abstract:
An ultra-fine trench isolation with superior electrical properties was formed using a new fabrication process. A void-free shape and sufficient thickness of the field oxide were realized by two-step filling using tetraethyl-ortho-silicate (TEOS) oxide as the lower layer and high-density CVD-SiO 2 as the upper capping layer. The breakdown voltages were as high as 7.7 V, even for an isolation space as narrow as 0.13 µm. The subthreshold characteristics of the metal oxide semiconductor field effect transistor (MOSFET) isolated by the trench were kink-free. The threshold voltage of the parasitic MOSFET, furthermore, was more than 6 V, even without a channel stop implant to suppress punch-through.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1625
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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