In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 10R ( 2010-10-01), p. 105803-
Abstract:
We studied the Raman scattering of the InN epilayers with rapid thermal annealing (RTA). The longitudianl optical (LO) phonon in Raman spectrum shifts toward lower frequency and increases asymmetric broadening as the RTA temperature is increased. We suggest that the formation of indium-related defects, such as metallic indium clusters or indium vacancies, are responsible for the change in the asymmetric ratio in the LO mode. The E 2 (high) mode in the Raman spectrum does not exhibit significant change after RTA since the indium atom does not involve the E 2 (high) mode.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.105803
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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