In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 9R ( 2010-09-01), p. 091503-
Abstract:
A novel low-cost metal–insulator–metal (MIM) capacitor with a high capacitance density of ∼10.2 fF/µm 2 has been developed by using nickel fully silicided (Ni-FUSI) polycrystalline silicon electrodes. The low resistivities of Ni 3 Si, Ni 2 Si, and NiSi electrodes have been achieved and determined to be around 106, 39, and 21 µΩ·cm without requiring noble metal materials. At room temperature, this MIM capacitor also displays a good leakage current density of 3.9×10 -6 A/cm 2 at 1 V and a quadratic voltage coefficient (α) of 2266 ppm/V 2 . Experiments demonstrated that Schottky emission is the dominant conduction mechanism at high temperatures and low fields under top electrode injection. The Schottky barrier heights (Φ B ) at the Ni 3 Si/ZrO 2 , Ni 2 Si/ZrO 2 , and NiSi/ZrO 2 interfaces were extracted firstly to be 1.15, 1.05, and 0.8 eV, respectively. Material characterization further reveals this structure highly appropriate for advanced MIM capacitors.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.091503
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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