In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 9A ( 1997-09-01), p. L1150-
Abstract:
This letter reports on the impact of gate microstructure on deep-submicron complementary metal-oxide-semiconductor (CMOS) device performance. Transistors with different gate microstructures (α-Si gate vs poly-Si gate) were fabricated using a 2.5 V sub-0.25 µ m CMOS process and their performances were compared. The α-Si gate provides better capability for suppressing boron penetration in p-channel metal-oxide-semiconductor field-effect transistors (MOSFET's), but the depletion effect is more severe than that of the poly-Si gate. A modified gate doping (MGD) effect, in which the difference of linear transconductance ( g m ) between transistors with two different gate microstructures shows a strong gate-length dependence, is reported for the first time and evaluated by the impact of grain boundary segregation on the electrically activated gate impurity density. The MGD effect makes the poly-Si gate more advantageous in the design of high-performance CMOS transistors with gate critical lengths shorter than 0.25 µ m.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L1150
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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