In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 5R ( 1996-05-01), p. 2845-
Abstract:
The influence of resist and absorber stress distributions on X-ray mask distortion induced during back-etching preceding subtractive fabrication is analyzed experimentally and simulated. The stress distribution (gradient) in a resist and/or that in an absorber film causes larger pattern displacement rather than the film average stress. Some resists have considerably high stress after coating on a wafer, and this stress also changes during exposure, causing local pattern displacements. However, use of chemically amplified resist systems, in which the reaction after exposure is limited to a small amount acid generation, might solve this problem. Low-stress positive-tone resists should thus be developed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.2845
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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