In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 8R ( 1998-08-01), p. 4627-
Abstract:
We report here the charge cloud shape produced by an X-ray
photon inside the charge-coupled device (CCD) as well as a method to measure it. The measurement is carried out by using a multi-pitch mesh which enables
us to specify the interaction position of X-rays with subpixel resolution not only for single events but also for split events.
Split events are generated when the X-ray interaction position is close to the pixel boundary. The width of this area depends on the
apparent charge size. Finally, we measured the signal output from the pixel according to the interaction position of X-rays. By
differentiating this function, we obtain, in detail, the charge cloud shape which can be well represented by an asymmetric Gaussian function.
The charge cloud size for Al-K X-rays is 0.7×1.4 µm 2 while that for Mo-L X-rays is 0.8×1.4 µm 2 . The size of
the photoelectron in Si produced by these X-rays is about 0.04 µm. Taking into account the mean absorption length for
these X-rays in Si, diffusion process in the depletion region cannot explain the charge cloud size. The asymmetry of the charge cloud
probably arises from the asymmetry of the electric field in the CCD.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.4627
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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