In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 8L ( 2005-08-01), p. L1076-
Abstract:
The structural evolution of InN from microsized grains to nanocolumns, and to a two-dimensional epifilm grown on Si(111) substrates was realized by plasma-assisted molecular-beam epitaxy. Grainy InN was grown at a higher substrate temperature, and a higher N BEP /In BEP ratio, and on a low-temperature InN buffer layer. A high-quality InN epifilm was grown at a lower substrate temperature, and a lower N BEP /In BEP ratio, and on a high-temperature AlN buffer layer with a room-temperature Hall mobility and a carrier concentration of 860 cm 2 /(V·s) and 8.9×10 18 cm -3 , respectively. Photoluminescence spectroscopy showed a unique peak in the infrared region indicating that the energy gap of the InN is in the range of 0.64–0.66 eV.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L1076
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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