In:
Advanced Materials Interfaces, Wiley, Vol. 7, No. 23 ( 2020-12)
Abstract:
The transition‐metal dichalcogenide HfS 2 is a promising alternative semiconductor with adequate band gap and high carrier mobility. However, a controllable growth of continuous HfS 2 films with selectivity for specific surfaces at a low temperature on a large scale has not been demonstrated yet. Herein, HfS 2 films are grown at 100 °C by atomic layer deposition (ALD) based on the precursors tetrakis(dimethylamido)hafnium and H 2 S. In situ vibrational spectroscopy allows for the definition of the temperature range over which (Me 2 N) 4 Hf chemisorbs as one monolayer. In that range, sequential exposures of the solid surface with (Me 2 N) 4 Hf and H 2 S result in self‐limiting reactions that yield alternating surface termination with dimethylamide and thiol. Repeating the cycle grows smooth, continuous, stoichiometric films of thicknesses adjustable from angstroms to 〉 100 nm, as demonstrated by spectroscopic ellipsometry, XRR, AFM, UV–vis and Raman spectroscopy, XPS, and TEM. The well‐defined surface chemistry enables one to deposit HfS 2 selectively using, for example, patterns generated in molecular self‐assembled monolayers. This novel ALD reaction combines several attractive features necessary for integrating HfS 2 into devices.
Type of Medium:
Online Resource
ISSN:
2196-7350
,
2196-7350
DOI:
10.1002/admi.202001493
Language:
English
Publisher:
Wiley
Publication Date:
2020
detail.hit.zdb_id:
2750376-8
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