In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 1A ( 1997-01-01), p. L61-
Abstract:
Extremely robust quasi-one-dimensional quantum states are formed in the modulation-doped n -Al x Ga 1- x As/ u -GaAs/ u -Al x Ga 1- x As double-heterostructure with interfaces corrugated by periodical bending. Electrons accumulate strongly in a very narrow channel at the convex corner of GaAs region at the u -GaAs/ n -Al x Ga 1- x As interface. Wave functions for holes are limited to a very narrow channel near the convex corner of the same GaAs region at the opposite interface, u -GaAs/ u -Al x Ga 1- x As. The energy levels of the quasi-one-dimensional states are found to be insensitive to the variation of the well width d of u -GaAs at least wider than 90 Å. Furthermore, the energy level spacing is large, and electrons and holes wave functions are spatially separated from each other.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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