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1

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Mesoscopic-capacitor effect in G a N / A l x Ga 1 − x N quantum wells: Effects on the electronic states

Di Carlo, A. ; Reale, A. ; Lugli, P. ; [et al.]

American Physical Society (APS) ; 2001

In: Physical Review B Vol. 63, No. 23 ( 2001-5-17)

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In: Physical Review B, American Physical Society (APS), Vol. 63, No. 23 ( 2001-5-17)

Type of Medium: Online Resource

ISSN: 0163-1829 , 1095-3795

URL: Article

DOI: 10.1103/PhysRevB.63.235305

RVK:

UA 6500.3.B

Language: English

Publisher: American Physical Society (APS)

Publication Date: 2001

detail.hit.zdb_id: 2844160-6

detail.hit.zdb_id: 209770-9

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2

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Anisotropic polarization of non‐polar GaN quantum dot emission

Mata, R. ; Garro, N. ; Cros, A. ; [et al.]

Wiley ; 2009

In: physica status solidi c Vol. 6, No. S2 ( 2009-06)

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In: physica status solidi c, Wiley, Vol. 6, No. S2 ( 2009-06)

Abstract: We report on experimental and theoretical studies of the polarization selection rules of the emission of non‐polar GaN/AlN self‐assembled quantum dots. Time‐integrated and time‐resolved photoluminescence measurements have been performed to determine the degree of polarization. It is found that the emission of some samples can be predominantly polarized parallel to the wurtzite c axis, in striking difference with the previously reported results for bulk GaN and its heterostructures, in which the emission was preferentially polarized perpendicular to the c axis. Theoretical calculations based on an 8‐band k·p model are used to analyze the relative importance of strain, confinement and quantum dot shape on the polarization selection rules. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Type of Medium: Online Resource

ISSN: 1862-6351 , 1610-1642

URL: Issue

URL: Article

DOI: 10.1002/pssc.v6.5s2

DOI: 10.1002/pssc.200880868

Language: English

Publisher: Wiley

Publication Date: 2009

detail.hit.zdb_id: 2105580-4

detail.hit.zdb_id: 2102966-0

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3

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Persistent damage to Enterocytozoon bieneusi, with persistent symptomatic relief, after combined furazolidone and albendazole in AIDS patients

Dionisio, D. ; Manneschi, L. I. ; Di Lollo, S. ; [et al.]

BMJ ; 1998

In: Journal of Clinical Pathology Vol. 51, No. 10 ( 1998-10-01), p. 731-736

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In: Journal of Clinical Pathology, BMJ, Vol. 51, No. 10 ( 1998-10-01), p. 731-736

Type of Medium: Online Resource

ISSN: 0021-9746

URL: Article

DOI: 10.1136/jcp.51.10.731

RVK:

XA 10000

Language: English

Publisher: BMJ

Publication Date: 1998

detail.hit.zdb_id: 2028928-5

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4

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Polariton emission and reflectivity in GaN microcavities as a function of angle and temperature

Sellers, I. R. ; Semond, F ; Leroux, M. ; [et al.]

American Physical Society (APS) ; 2006

In: Physical Review B Vol. 74, No. 19 ( 2006-11-13)

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In: Physical Review B, American Physical Society (APS), Vol. 74, No. 19 ( 2006-11-13)

Type of Medium: Online Resource

ISSN: 1098-0121 , 1550-235X

URL: Article

DOI: 10.1103/PhysRevB.74.193308

RVK:

UA 6500.3.B

Language: English

Publisher: American Physical Society (APS)

Publication Date: 2006

detail.hit.zdb_id: 1473011-X

detail.hit.zdb_id: 2844160-6

detail.hit.zdb_id: 209770-9

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5

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Reduction of the internal electric field in wurtzite a-plane GaN self-assembled quantum dots

Garro, N. ; Cros, A. ; Budagosky, J. A. ; [et al.]

AIP Publishing ; 2005

In: Applied Physics Letters Vol. 87, No. 1 ( 2005-07-04)

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In: Applied Physics Letters, AIP Publishing, Vol. 87, No. 1 ( 2005-07-04)

Abstract: We present a study of the emission of GaN∕AlN self-assembled quantum dots grown on a-plane 6H-SiC showing evidence of the suppression of the internal electric field. The strain in dots and barriers is determined by means of Raman scattering and the induced piezoelectric polarizations are estimated. These reveal a compensation of the spontaneous polarization and justify the lack of a quantum confined Stark effect found in the photoluminescence spectra. Strain effects and strong confinement are responsible for the partial depolarization of the emission and its energy dependence.

Type of Medium: Online Resource

ISSN: 0003-6951 , 1077-3118

URL: Article

DOI: 10.1063/1.1977210

RVK:

UA 1000

Language: English

Publisher: AIP Publishing

Publication Date: 2005

detail.hit.zdb_id: 211245-0

detail.hit.zdb_id: 1469436-0

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6

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GaAs solid state detectors for particle physics

Beaumont, S.P ; Bertin, R ; Booth, C.N ; [et al.]

Elsevier BV ; 1992

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 322, No. 3 ( 1992-11), p. 472-482

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In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier BV, Vol. 322, No. 3 ( 1992-11), p. 472-482

Type of Medium: Online Resource

ISSN: 0168-9002

URL: Article

DOI: 10.1016/0168-9002(92)91217-W

RVK:

UA 5680.A

Language: English

Publisher: Elsevier BV

Publication Date: 1992

detail.hit.zdb_id: 1466532-3

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7

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Gallium arsenide charged particle detectors; trapping effects

Beaumont, S.P. ; Bertin, R. ; Booth, C.N. ; [et al.]

Elsevier BV ; 1994

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 342, No. 1 ( 1994-3), p. 83-89

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In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier BV, Vol. 342, No. 1 ( 1994-3), p. 83-89

Type of Medium: Online Resource

ISSN: 0168-9002

URL: Article

DOI: 10.1016/0168-9002(94)91413-3

RVK:

UA 5680.A

Language: English

Publisher: Elsevier BV

Publication Date: 1994

detail.hit.zdb_id: 1466532-3

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8

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Charge transport properties of undoped SI LEC GaAs solid-state detectors

Beaumont, S.P. ; Bertin, R. ; Booth, C.N. ; [et al.]

Elsevier BV ; 1993

In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 326, No. 1-2 ( 1993-3), p. 313-318

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In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier BV, Vol. 326, No. 1-2 ( 1993-3), p. 313-318

Type of Medium: Online Resource

ISSN: 0168-9002

URL: Article

DOI: 10.1016/0168-9002(93)90371-N

RVK:

UA 5680.A

Language: English

Publisher: Elsevier BV

Publication Date: 1993

detail.hit.zdb_id: 1466532-3

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9

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GaAs solid state detectors for physics at the LHC

Beaumont, S. P. ; Bertin, R. ; Booth, C. N. ; [et al.]

Institute of Electrical and Electronics Engineers (IEEE) ; 1993

In: IEEE Transactions on Nuclear Science Vol. 40, No. 4 ( 1993-8), p. 1225-1230

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In: IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers (IEEE), Vol. 40, No. 4 ( 1993-8), p. 1225-1230

Type of Medium: Online Resource

ISSN: 0018-9499 , 1558-1578

URL: Article

DOI: 10.1109/TNS.1993.8526781

RVK:

UA 1000

Language: Unknown

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Publication Date: 1993

detail.hit.zdb_id: 218510-6

detail.hit.zdb_id: 2025398-9

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10

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Role of the host matrix in the carrier recombination of InGaAsN alloys

Vinattieri, A. ; Alderighi, D. ; Zamfirescu, M. ; [et al.]

AIP Publishing ; 2003

In: Applied Physics Letters Vol. 82, No. 17 ( 2003-04-28), p. 2805-2807

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In: Applied Physics Letters, AIP Publishing, Vol. 82, No. 17 ( 2003-04-28), p. 2805-2807

Abstract: We present an experimental study of the carrier recombination dynamics in high-quality (InGa)(AsN)/GaAs and Ga(AsN)/GaAs quantum-well structures after picosecond excitation. A comparison among samples with and without nitrogen and with different In concentration shows that nonradiative channels originated in the host matrix [i.e., (InGa)As and GaAs] play a dominant role in the recombination dynamics of these heterostructures.

Type of Medium: Online Resource

ISSN: 0003-6951 , 1077-3118

URL: Article

DOI: 10.1063/1.1569983

RVK:

UA 1000

Language: English

Publisher: AIP Publishing

Publication Date: 2003

detail.hit.zdb_id: 211245-0

detail.hit.zdb_id: 1469436-0

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Kooperativer Bibliotheksverbund

Berlin Brandenburg