In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 3A ( 1994-03-01), p. L271-
Abstract:
The growth of In x Ga 1- x As (0≤ x ≤0.8) on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) is systematically studied. The In distribution coefficient for the InGaAs system at low growth temperatures was larger than unity and increased with decreasing growth temperature. The surface morphology can be improved by decreasing the growth temperature. The decrease of the carrier concentration in the Si-doped InGaAs layer after annealing at temperatures ranging from 500 to 700°C was smaller in the higher In composition samples. A contact resistivity of 4×10 -7 Ω·cm 2 was obtained for the InGaAs contact with In composition of 0.7.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.L271
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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