In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 1A ( 1992-01-01), p. L7-
Abstract:
Calculations of the confinement subbands energy levels, interband transitions energy and related overlapping wavefunctions in a single In 0.2 Ga 0.8 As/GaAs non-square strained quantum well structure have been carried out for an error function confinement profile. The results indicate a squeezing of subband states during the latter stages of diffusion, and an enhancement of the off diagonal transitions overlapping wavefunction, during the mid stages of diffusion, which give rise to a relaxed selection rule.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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