In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 5B ( 1993-05-01), p. L742-
Abstract:
We describe the electrical properties of GaAs overgrown by molecular beam epitaxy on 100 kV Ga + ion implanted substrates. Room-temperature carrier mobilities of the overgrown layers maintain good values for Ga doses up to 10 14 /cm 2 . With increasing Ga dose, the conductances of the overgrown layers shows a significant reduction, which is attributed to carrier depletion caused by ionized deep acceptors in the Ga-implanted layer. This effect can be almost entirely screened out when GaAs layers are overgrown directly on Ga-implanted semi-insulating substrates.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L742
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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