In:
Applied Physics Letters, AIP Publishing, Vol. 78, No. 13 ( 2001-03-26), p. 1811-1813
Abstract:
Epitaxial growth of Zn1−xMgxS alloy thin films on GaP(100) substrates was carried out using the molecular-beam-epitaxy technique. In situ reflection high-energy electron diffraction studies show that the alloys can be grown with a stable zinc-blende structure up to x around 30%. For x & gt;30%, a structural transition will occur at a critical thickness which is sensitively dependent on the x composition. A near-band-edge peak with a full width at half maximum of about 10 nm was observed in room-temperature photoluminescence measurements made on as-grown alloy thin films. Several Zn1−xMgxS-based Schottky barrier photodetectors were fabricated. Room-temperature photoresponse measurements were performed on these detectors and abrupt long-wavelength cutoffs covering 325, 305, 295, and 270 nm were achieved for devices with Mg composition of 16%, 44%, 57%, and 75%, respectively. The response curve of the Zn0.43Mg0.57S device offers a close match to the erythemal action spectrum that describes human skin sensitivity to UV radiation.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2001
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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