In:
Chinese Journal of Luminescence, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Vol. 32, No. 10 ( 2011), p. 1014-1019
Type of Medium:
Online Resource
ISSN:
1000-7032
Uniform Title:
SiN
x
插入层的生长位置对GaN外延薄膜性质的影响
DOI:
10.3788/fgxb/2011/32/10
DOI:
10.3788/fgxb20113210.1014
Language:
English
,
Chinese
Publisher:
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Publication Date:
2011
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