In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4R ( 2000-04-01), p. 1769-
Abstract:
A novel electroluminescence oxide phosphor
(Gd 2 O 3 –Ga 2 O 3 ):Ce has been prepared by electron
beam evaporation. The emission peaks of photoluminescence lie at 390 nm and a shoulder at 440 nm. However, the electroluminescence
of the (Gd 2 O 3 –Ga 2 O 3 ):Ce thin film have four
emission peaks at 358 nm, 390 nm, 439 nm and 510 nm, respectively. The optical absorption of
(Gd 2 O 3 –Ga 2 O 3 ):Ce thin film and the
photoluminescence of composite materials with various ratios of Ga 2 O 3 /(Gd 2 O 3 +Ga 2 O 3 ) have also been
described to investigate the origin of emission of photoluminescence and electroluminescence.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.1769
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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