In:
Applied Physics Letters, AIP Publishing, Vol. 60, No. 3 ( 1992-01-20), p. 371-373
Abstract:
When III-V growth is interrupted for processing, in the ambient laboratory environment for example, regrown heterojunction quality has been rather disappointing in comparison to uninterrupted epitaxial growth. We have conducted a search for surface chemical preparations on In0.53Ga0.47As which would produce the highest-quality InP/In0.53Ga0.47As regrown heterojunction interface, as measured by surface recombination velocity (SRV). After an extensive survey, we have found that dilute bromine-based etching solutions are best for preparing a free In0.53Ga0.47As surface for subsequent InP regrowth. The resulting InP/In0.53Ga0.47As interfacial SRV is ≲20 cm/s, comparable to heterojunctions grown without any interruption at all.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1992
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Bookmarklink