In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 12R ( 1992-12-01), p. 4086-
Abstract:
An X-ray mask fabrication technology using a tungsten (W) absorber with a chromium (Cr) mask and indium titanium oxide (ITO) stopper was developed. When SF 6 was used as the dry etching gas, substantial side etching occurred because the F radical reacts with W on the sidewall. In order to prevent side etching, a SF 6 and CHF 3 gas mixture was applied; however, the ratio of dry etching rate of W to that of resist is low. Furthermore, the underlying layer such as that of silicon dioxide (SiO 2 ), which was used as the etching stopper, was easily damaged. Instead of a resist mask and SiO 2 stopper, a Cr layer as the etching mask and ITO layer as the stopper layer were applied. By the use of these structures and etching procedures, high aspect ratio W patterns with vertical sidewalls have been successfully fabricated.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.4086
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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