In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1972-
Abstract:
The fabrication and characterization of ZnHgSSe/ZnSSe double heterostructure (DH) laser structures, lattice-matched on GaAs (100) substrates, are described. The structures were grown by molecular beam epitaxy with a ZnHgSSe active layer which includes a small amount of Hg (∼1.2%). The occurrence of stimulated emission was observed at 77 K in the blue-green wavelength region by optically pumping the DH structures.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1972
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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