In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4S ( 1994-04-01), p. 2207-
Abstract:
NF 3 was injected into the downstream of hydrogen and water vapor plasma to produce etching species without generating fluorine atoms, and native oxides on Si(111) surfaces formed in H 2 SO 4 /H 2 O 2 solution were removed. The absence of fluorine atoms in the plasma and the downstream was confirmed by monitoring with a monochromator and an ESR spectrometer, respectively. Thus, etching of the quartz surface of a chamber which led to particle generation was not observed. The Si surfaces after the downstream treatment were investigated and compared with that after HF wet cleaning using attenuated total reflection Fourier transform infrared (FT-IR ATR) spectroscopy and X-ray photoelectron spectroscopy (XPS).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.2207
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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