In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4B ( 2000-04-01), p. L354-
Abstract:
A low-permittivity organic dielectric, methylsilsesquioxane (MSQ), used as an
interlevel dielectric is expected to reduce the parasitic capacitance in integrated circuit. However, MSQ film can be easily degraded during resist ashing after the film is
etched with the damascene trenches being created. In this work, a novel sidewall capping technology is developed to solve the degradation issue. Prior to resist ashing,
a high-quality, low-permittivity oxide film is selectively deposited onto the sidewalls of MSQ trenches using selective liquid-phase deposition. Experimental results
demonstrate that the capping oxide can effectively protect the sidewalls of MSQ trenches from ashing-induced degradation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.L354
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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