In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 5R ( 2000-05-01), p. 2512-
Abstract:
The role of two-step low-temperature GaN (LT-GaN) layers was
investigated by cathodoluminescence, high resolution double crystal X-ray diffraction, transmission electron microscopy, atomic force
microscopy, and current-voltage measurements. It was shown that the introduction of the LT-GaN layer prevents In from evaporating from
InGaN during the high-temperature growth of p-GaN. The trasmission electron microscopic (TEM) results showed that the LT-GaN hampers
dislocation propagation from the InGaN active layer into the p-GaN, leading to reduction in the dislocation density in the p-GaN. The
use of the two-step LT-GaN resulted in an increase in the output power of light-emitting diodes and a decrease in the operating
forward voltage.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2512
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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