In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 3S ( 1998-03-01), p. 1332-
Abstract:
The effect of the platinum and aluminum interface reaction on the capacitor properties were investigated in 64 k ferroelectric random access memory (RAM). Aluminum diffused into platinum and reacted to form an intermetallic compound during the post-anneal when aluminum had direct contact with the top platinum layer of the ferroelectric capacitor. The Al/Pt/PZT contact was changed into an Al–Pt and lead-zirconate-titanate contact by the reaction. As a result, ferroelectric properties degraded and the leakage current of the top electrode and lead-zirconate-tianate contact started to increase after annealing at 300°C. The capacitor structure was destroyed by the volume expansion due to the Al/Pt reaction at 400°C. To prevent this reaction, a TiN layer was introduced as the barrier layer. This contact scheme showed no breakdown of the ferroelectric capacitor up to 400°C, which indicated that TiN acts as a good diffusion barrier for the double-metal process.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.1332
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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